GCLSemi is committed to the research and development, including manufacturing of semiconductor silicon wafers, using MCZ crystal growth technology, pulling a maximum diameter of crystal ingots 300 mm , under a high level of quality control, and then producing high-quality silicon wafers through cutting, grinding, polishing, cleaning and key processes. Our products meet the stringent requirements of integrated circuit chip manufacturers who demand high standard for key parameters and quality.
Polished wafer: taking electronic grade polycrystalline silicon as raw material, the monocrystalline silicon rod can be obtained after completing the monocrystalline silicon growth process in the long crystal furnace, and then the polished silicon wafer is obtained by cutting, slicing, grinding, polishing, cleaning and other steps. Polished wafer is the basic and most widely used products; additional polishing could enhance the wafer with more special properties too.
Epitaxial wafer: The polished wafer is heated in an epitaxial furnace, and the reaction principle is that the gaseous compound of silicon reacts on the surface of the wafer and is deposited on the surface of the silicon substrate in the form of a single crystal film. Compared to polished wafer, epitaxial wafers have smaller series resistance, eliminating many of the defects introduced in crystal growth and wafer processing.
P- , N-
High Res/Low Oxygen(＞5000Ω-cm) , High Res/High Oxygen
Low Res：Dopant(Boron , Antimony , Red phosphorous)